On topological aspects of bilayer Germanium Phosphide

Volume 22, Issue 4, pp 347--362 http://dx.doi.org/10.22436/jmcs.022.04.04

Publication Date: September 05, 2020 Submission Date: February 12, 2020 Revision Date: June 03, 2020 Accteptance Date: June 15, 2020

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Authors

Farukh Ejaz - Department of Mathematics, COMSATS University Islamabad, Lahore Campus, Pakistan. Muhammad Hussain - Department of Mathematics, COMSATS University Islamabad, Lahore Campus, Pakistan. Roslan Hasni - School of Informatics and Applied Mathematics, Universiti Malaysia Terengganu, 21030 Kuala Terengganu, Malaysia.

Abstract

A material having electrical conductivity value falling between conductor and insulator is known as semiconductor. Due to high adaptability of these materials makes them best basic material used in advanced electronics and communications. Some popular semiconductors in periodic table are silicon, germanium and gallium arsenide. Here in this article we will give topological aspects on different structural form of germanium phosphide. A semiconductor used in high frequency communication and diodes.

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Keywords

• Germanium Phosphide
• topological parameters
• degree invariants

MSC

•  05C09
•  05C92

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